參數(shù)資料
型號: 2SK3361
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/4頁
文件大?。?/td> 40K
代理商: 2SK3361
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3361
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
Date Published
Printed in Japan
D14319EJ1V0DS00 (1st edition)
April 2000 NS CP(K)
DESCRIPTION
The 2SK3361 is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
Low on-state resistance
R
DS(on)1
= 20 m
MAX. (V
GS
= 10
V, I
D
= 20
A)
R
DS(on)2
= 28 m
MAX. (V
GS
= 4.5
V, I
D
= 20
A)
Low C
iss
: C
iss
= 4900
pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
100
V
Gate to Source Voltage
V
GSS(AC)
±
20
V
Gate to Source Voltage
V
GSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
40
±
160
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25°C)
P
T
35
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
40
A
E
AS
160
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Starting T
ch
= 25
°C, R
G
= 25
, V
GS
= 20
V
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
3.57
°C/W
Channel to Ambient
R
th(ch-A)
62.5
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3361
Isolated TO-220
The mark
#
shows major revised points.
#
(Isolated TO-220)
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