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參數(shù)資料
| 型號： | 2SK3377-Z |
| 廠商： | NEC Corp. |
| 英文描述： | DIODE SCHOTTKY SINGLE 30V 150mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-523 3K/REEL |
| 中文描述： | 開關(guān)N溝道功率場效應(yīng)晶體管工業(yè)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK3377-Z |
1999,2000
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14328EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state Resistance
R
DS(on)1
= 44 m
MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 78 m
MAX. (V
GS
= 4.0 V, I
D
= 10 A)
Low C
iss
: C
iss
= 760 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±20
A
I
D(pulse)
±50
A
Total Power Dissipation (T
C
= 25°C)
P
T
30
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
15
A
E
AS
23
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
4.17
°C/W
Channel to Ambient
R
th(ch-A)
125
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3377
TO-251
2SK3377-Z
TO-252
#
#
#
#
#
#
(TO-251)
(TO-252)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3377 | Switching N-channel power MOS FET industrial use |
| 2SK3378 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3380 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3390 | Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3402 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3377-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) TO-252 |
| 2SK3377-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3378 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3378ENTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3378ENTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Switching |
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