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參數(shù)資料
| 型號(hào)： | 2SK3081 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 50K |
| 代理商： | 2SK3081 |
2SK3081
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Gate Charge Qg (nc)
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di / dt = 50 A / μs
V = 0, Ta = 25 °C
100
200
5
30
1
I = 45 A
V
GS
V
DS
V = 5 V
10 V
15 V
V = 15 V
10 V
5 V
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = 10 V, V = 10 V
PW = 5 μs, duty < 1 %
r
d(on)
t
d(off)
t
tf
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3082 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3105 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3107 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3081-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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