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參數(shù)資料
| 型號(hào)： | 2SK3107 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SK3107 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13802EJ2V0DS00 (2nd edition)
August 1999 NS CP(K)
The mark
#
shows major revised points.
DESCRIPTION
The 2SK3107 is a switching device which can be driven directly by a
2.5
-
V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3107
SC-75(USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
±0.1
A
I
D(pulse)
±0.4
A
P
T
200
mW
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 3.0 cm
2
x 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
1
0
G
0.2
+0.1
–0
0.5
0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: D1
Gate
Drain
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3108 | Switching N-channel power MOS FET industrial use |
| 2SK3109 | Switching N-channel power MOS FET industrial use |
| 2SK3109-S | Switching N-channel power MOS FET industrial use |
| 2SK3109-ZJ | Switching N-channel power MOS FET industrial use |
| 2SK3119 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3107(T1-A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SK3107-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,30V,0.1A,8.0ohm,USM3 |
| 2SK3108 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3108-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 8A 400m@10V IsolatedTO220 Bulk |
| 2SK3109 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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