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參數(shù)資料
| 型號(hào)： | 2SK3109-ZJ |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK3109-ZJ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13332EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DATA SHEET
The mark
#
shows major revised points.
DESCRIPTION
The 2SK3109 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
R
DS(on)
= 0.4
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Low input capacitance
C
iss
= 400 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to source voltage (V
GS
= 0 V)
Gate to source voltage (V
DS
= 0 V)
Drain current (DC) (T
C
= 25 °C)
Drain current (pulse)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
200
±
30
±
10
±
30
1.5
50
150
V
V
A
A
W
W
°C
°C
A
mJ
Note1
Total power dissipation (T
A
= 25 °C)
Total power dissipation (T
C
= 25 °C)
Channel temperature
Storage temperature
Single avalanche current
Single avalanche energy
55 to +150
10
35
Note2
Note2
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Starting T
ch
= 25 °C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3109
TO-220AB
2SK3109-S
TO-262
2SK3109-ZJ
TO-263
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3119 | Ultrahigh-Speed Switching Applications |
| 2SK3120 | Ultrahigh-Speed Switching Applications |
| 2SK3121 | Ultrahigh-Speed Switching Applications |
| 2SK3122 | Ultrahigh-Speed Switching Applications |
| 2SK3133L | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK311 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3110 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3110-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 14A 180m@10V IsolatedTO220 Bulk |
| 2SK3111 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3111-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 20A 180m@10V TO220AB Bulk |
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