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參數(shù)資料
| 型號(hào)： | 2SK3109-ZJ |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK3109-ZJ |
Data Sheet D13332EJ1V0DS00
3
2SK3109
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
10
20
30
25
5
0
Pulsed
10
15
20
30
35
0
V
GS
= 10 V
V
GS
= 30 V
40
50
0.01
0
0.1
1
10
4
12
0.001
100
V
= 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
8
16
T
ch
= 125
C
75
C
25
C
-
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10
V
I
D
=
1
mA
50
0
150
50
2.0
2.5
100
3.0
3.5
4.0
4.5
5.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
f
|
I
D
- Drain Current - A
1
1
10
10
100
V
= 10 V
Pulsed
T
ch
=
25
C
25 C
75 C
125 C
0.01
0.1
0.01
0.1
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.0
V
GS
- Gate to Source Voltage - V
R
D
0
8
0.1
10
16
0.3
0.2
0.4
0.5
0
20
2
4
6
12
14
18
0.6
0.7
0.8
0.9
I
D
= 10 A
5 A
2 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1.2
0.8
0.6
0.2
10
100
0.1
0
1
Pulsed
V
GS
= 10 V
0.4
1.0
1.4
V
GS
= 30 V
#
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK311 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3110 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3110-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 14A 180m@10V IsolatedTO220 Bulk |
| 2SK3111 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3111-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 20A 180m@10V TO220AB Bulk |
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