參數(shù)資料
型號(hào): 2SK3081
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 3/9頁
文件大小: 50K
代理商: 2SK3081
2SK3081
3
Main Characteristics
100
75
50
25
0
50
100
150
200
0.1
0.3
1
3
10
30
100
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
1 shot pulse
10 μs
100μs
PW=10ms
DCOpeaion
(Tc=25°C
Operation in
this area is
limited by R
DS(on)
100
80
60
40
20
0
2
4
6
8
10
100
80
60
40
20
0
2
4
6
8
10
4 V
V = 2.5 V
6 V
5 V
8 V
4.5 V
10 V
Tc = –25°C
25°C
75°C
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
3.5 V
3 V
V = 10 V
Pulse Test
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3081-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3082 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3082L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3082L-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching