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參數(shù)資料
| 型號： | 2SK3081 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 50K |
| 代理商： | 2SK3081 |
2SK3081
4
1.0
0.8
0.6
0.4
0.2
0
4
8
12
16
20
1
10
100
2
50
100
20
50
10
5
50
40
30
20
10
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
10
5
1
2
0.5
20
5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
I = 50 A
10 A
20 A
V = 4 V
10 V
I = 20 A
10 A
10, 20 A
50 A
30
20
50
V = 4 V
10 V
Pulse Test
100
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
Pulse Test
R
D
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3082 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3105 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3107 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3081-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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