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參數(shù)資料
| 型號(hào)： | 2SK2996 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 408K |
| 代理商： | 2SK2996 |
2SK2996
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
—
0.74
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3.4
6.8
—
S
Input capacitance
Ciss
—
1500
—
Reverse transfer capacitance
Crss
—
13
—
Output capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
—
140
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
55
—
Fall time
tf
—
27
—
Switching time
Turnoff time
toff
—
145
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
38
—
Gatesource charge
Qgs
—
21
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
—
17
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
10
A
Pulse drain reverse current
(Note 1)
IDRP
—
30
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1600
—
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
17
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2996
Part No. (or abbreviation code)
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PDF描述 |
|---|---|
| 2SK2998 | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK3012 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3013 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3017 | 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3019TL | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2996(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK2996(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 600V, 10A - Rail/Tube |
| 2SK2998 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 0.5A 3PIN L-STM - Bulk |
| 2SK2998(TE6,F,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2998(TPE6,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 0.5A 3-Pin TO-92 Mod T/R Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.5A, 500V, TO92 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 500V 0.5A TO-92 Mod 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,500V/0.5A/18ohm,LSTM |
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