參數(shù)資料
型號: 2SK2998
元件分類: 小信號晶體管
英文描述: 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 375K
代理商: 2SK2998
2SK2998
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2998
Chopper Regulator, DCDC Converter Applications
Low drainsource ON resistance
: RDS (ON) = 11.5 (typ.)
High forward transfer admittance
: |Yfs| = 0.4 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
0.5
A
Drain current
Pulse (Note 1)
IDP
1.5
A
Drain power dissipation
PD
0.9
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
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