參數(shù)資料
型號: 2SK3017
元件分類: JFETs
英文描述: 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16F1B, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 417K
代理商: 2SK3017
2SK3017
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK3017
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 1.05 (typ.)
High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
8.5
A
Drain current
Pulse (Note 1)
IDP
25.5
A
Drain power dissipation (Tc = 25°C)
PD
90
W
Single pulse avalanche energy
(Note 2)
EAS
966
mJ
Avalanche current
IAR
8.5
A
Repetitive avalanche energy (Note 3)
EAR
9
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.39
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
41.6
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 24.5 mH, RG = 25 , IAR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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參數(shù)描述
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