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參數(shù)資料
| 型號： | 2SK2735L-E |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2SK2735L-E |
2SK2735(L), 2SK2735(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
Drain peak current
ID(pulse)*
1
80
A
Body to drain diode reverse drain current
IDR
20
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
20
28
m
ID = 10 A, VGS = 10 V*
3
Static drain to source on state
resistance
RDS(on)
—
35
50
m
ID = 10 A, VGS = 4 V*
3
Forward transfer admittance
|yfs|
8
16
—
S
ID = 10 A, VDS = 10 V*
3
Input capacitance
Ciss
—
750
—
pF
Output capacitance
Coss
—
520
—
pF
Reverse transfer capacitance
Crss
—
210
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
16
—
ns
Rise time
tr
—
225
—
ns
Turn-off delay time
td(off)
—
85
—
ns
Fall time
tf
—
90
—
ns
ID = 10 A, VGS = 10 V,
RL = 1
Body to drain diode forward voltage
VDF
—
1.0
—
V
IF = 20 A, VGS = 0
diF/ dt = 50 A/
s
Body to drain diode reverse recovery
time
trr
—
40
—
V
IF = 20 A, VGS = 0
diF/ dt = 50A/
s
Note:
3. Pulse test
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2736(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2738(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2740 | 功能描述:MOSFET N-CH 600V 7A TO-220FN RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2744 | 功能描述:MOSFET N-CH 50V 45A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2744(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 45A TO-3PN |
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