參數(shù)資料
型號(hào)： 2SK2746
元件分類(lèi)： JFETs
英文描述： 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 2-16C1B, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 421K
代理商： 2SK2746
2SK2746
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2746
DCDC Converter and Motor Drive Applications
Low drainsource ON resistance
: RDS (ON) = 1.3 (typ.)
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 640 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
800
V
Draingate voltage (RGS = 20 k)
VDGR
800
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
7
A
Drain current
Pulse (Note 1)
IDP
21
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
673
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 24.9 mH, RG = 25 , IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK2746(STA1,F,T) 制造商:Toshiba America Electronic Components 功能描述:
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