參數(shù)資料
型號(hào): 2SK2746
元件分類: JFETs
英文描述: 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16C1B, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 421K
代理商: 2SK2746
2SK2746
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 640 V, VGS = 0 V
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 3.5 A
1.3
1.7
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 3.5 A
1.25
5.0
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
30
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
140
pF
Rise time
tr
35
Turnon time
ton
80
Fall time
tf
50
Switching time
Turnoff time
toff
220
ns
Total gate charge (gatesource
plus gatedrain)
Qg
55
Gatesource charge
Qgs
30
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 7 A
25
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
7
A
Pulse drain reverse current
(Note 1)
IDRP
21
A
Forward voltage (diode)
VDSF
IDR = 7 A, VGS = 0 V
1.9
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 7 A, VGS = 0 V, dIDR / dt = 100 A / s
14
C
Marking
K2746
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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