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參數(shù)資料
| 型號(hào)： | 2SK2212 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK2212 |
2SK2212
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A
V
GS
= 10 V*
I
D
= 5 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
2.0
—
4.0
Static drain to source on state
resistance
—
0.24
0.3
1
Forward transfer admittance
|y
fs
|
3.5
6
—
S
1
Input capacitance
Ciss
—
1000
—
pF
Output capacitance
Coss
—
360
—
pF
Reverse transfer capacitance
Crss
—
65
—
pF
Turn-on delay time
t
d(on)
—
18
—
ns
I
D
= 5 A
V
GS
= 10 V
R
L
= 6
Rise time
t
r
t
d(off)
t
f
V
DF
—
80
—
ns
Turn-off delay time
—
65
—
ns
Fall time
—
50
—
ns
Body to drain diode forward
voltage
—
1.1
—
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
190
—
ns
I
= 10 A, V
= 0,
diF / dt = 100 A /
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2212-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2213-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2213-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2213-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2215-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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