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參數(shù)資料
| 型號(hào)： | 2SK222 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for Low-Frequency Low-Noise Amplifier Applications(低頻低噪聲放大器應(yīng)用的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)管結(jié)硅低頻低噪聲放大器應(yīng)用（低頻低噪聲放大器應(yīng)用的?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK222 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
Low-Frequency,
Low Noise Amplifier Applications
Ordering number:EN836G
2SK222
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/90895MO (KOTO)6027KI/2075MW 8-3836 No.836–1/3
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2019B
[2SK222]
Features
· Ultralow noise figure.
· Large
y
fs
.
· Low gate leakage current.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ
: SC-43
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* : The 2SK222 is classified by I
DSS
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