參數(shù)資料
型號: 2SK1968
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 6/10頁
文件大?。?/td> 47K
代理商: 2SK1968
2SK1968
6
3000
2000
1000
500
200
100
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I (A)
R
20
di/dt = 100 A/μs
V = 0, Ta = 25°C
Body to Drain Diode Reverse
Recovery Time
r
5000
2000
1000
500
200
100
50
20
10
C
0
10
20
30
40
50
Drain to Source Voltage V (V)
Ciss
Coss
Crss
V = 0
f = 1 MHz
Typical Capacitance vs. Drain to
Source Voltage
1000
800
600
400
200
0
20
Gate Charge Qg (nc)
40
60
80
100
D
D
I = 12 A
V
GS
V
DS
V = 100 V
250 V
400 V
V = 400 V
250 V
100 V
20
16
12
8
4
0
G
G
Dynamic Input Characteristics
300
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
S
20
V = 10 V, PW = 5
μ
s
duty 1 %, V 30 V
td(off)
tf
td(on)
tr
Switching Characteristics
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