參數(shù)資料
型號: 2SK1968
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 5/10頁
文件大?。?/td> 47K
代理商: 2SK1968
2SK1968
5
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage V (V)
D
D
15 A
I = 5 A
10 A
Pulse test
V
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50
100
Drain Current I (A)
S
R
D
V = 10 V
Pulse test
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
GS
160
Gate to Source Voltage V (V)
R
D
10 A
I = 5 A
Pulse test
V = 10 V
S
0
Static Drain to Source on State
Resistance vs. Temperature
50
20
10
5
2
1
0.5
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
F
f
20
Pulse test
V = 20 V
Tc = –25°C
25°C
75°C
Forward Transfer Admittance vs.
Drain Current
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