- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370106 > 2SK1968 (Hitachi,Ltd.) Silicon N-Channel MOS FET PDF資料下載
參數(shù)資料
| 型號： | 2SK1968 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1968 |
2SK1968
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V*
1
I
D
= 6 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source on state
resistance
—
0.68
0.88
Forward transfer admittance
|y
fs
|
5
10
—
S
Input capacitance
Ciss
—
1800
—
pF
Output capacitance
Coss
—
400
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
25
—
ns
I
D
= 6 A
V
GS
= 10 V
R
L
= 5
Rise time
—
70
—
ns
Turn-off delay time
—
145
—
ns
Fall time
—
65
—
ns
Body to drain diode forward
voltage
—
1.1
—
V
I
F
= 12 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
670
—
ns
I
F
= 12 A, V
= 0,
di
F
/ dt = 100 A /
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1971 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2007 | Silicon N-Channel MOS FET |
| 2SK2008 | Silicon N-Channel MOS FET |
| 2SK2040 | Switching N-channel power MOS FET industrial use |
| 2SK2045 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK198 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1981-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK1983-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK1984-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK1985-01MRSC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。