參數(shù)資料
型號: 2SK1968
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 4/10頁
文件大?。?/td> 47K
代理商: 2SK1968
2SK1968
4
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
P
Power vs. Temperature Derating
100
30
10
3
1
0.3
0.1
5
10
30
100
300
1000
Drain to Source Voltage V (V)
D
D
10μs
DS(on)
100μs
1ms
DCOpeaion(Tc=25°C
Operation in this area
is limited by R
Ta = 25°C
Maximum Safe Operation Area
20
16
12
8
4
0
10
20
30
40
50
Drain to Source Voltage V (V)
D
D
4.5 V
V = 4 V
5 V
Pulse test
10 V
6 V
Typical Output Characteristics
20
16
12
8
4
0
2
4
6
8
10
Gate to Source Voltage V (V)
D
D
25°C
Tc = 75°C
–25°C
Pulse test
V = 20 V
Typical Transfer Characteristics
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