- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49991 > 2SK1153 2.8 ohm, POWER, FET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SK1153 |
| 元件分類： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET, TO-220AB |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1153 |
2SK1153, 2SK1154
6
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
1,000
500
100
50
20
10
200
0.05
0.1
0.2
0.5
1.0
2
5
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
1,000
100
10
1
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
500
400
300
200
100
0
4
8
12
16
20
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
400 V
VDS
ID = 3 A
VGS
250 V
VDD = 400 V
250 V
100 V
VDD = 100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.05
0.1
0.2
0.5
1.0
2
5
Drain Current ID (A)
tf
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (on)
tr
td (off)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1154 | 3 ohm, POWER, FET, TO-220AB |
| 2SK1157-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1159-E | 8 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1164 | 0.8 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1153(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1153-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1154 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1154-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
發(fā)布緊急采購，3分鐘左右您將得到回復。