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參數(shù)資料
| 型號(hào)： | 2SK1153 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1153 |
2SK1153, 2SK1154
4
Power vs. Temperature Derating
60
40
20
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
50
1
10
1,000
Drain to Source Voltage VDS (V)
20
0.5
0.01
100
Drain
Current
I
D
(A)
0.05
0.1
10
3
30
300
5
2
0.2
1 ms
Ta = 25
°C
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
shot)
2SK1154
2SK1153
Operation
in
this
area
is
limited
by
R
DS
(on)
10
s
100
s
Typical Output Characteristics
5
4
3
2
0
4
8
12
16
20
Pulse Test
1
Drain
Current
I
D
(A)
VGS = 4 V
6 V
Drain to Source Voltage VDS (V)
4.5 V
10 V
5.5 V
8 V
5 V
Typical Transfer Characteristics
4
3
2
1
0
24
6
8
10
Gate to Source Voltage VGS (V)
5
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25°C
TC = 25°C
75°C
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PDF描述 |
|---|---|
| 2SK1154 | 3 ohm, POWER, FET, TO-220AB |
| 2SK1157-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1159-E | 8 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1164 | 0.8 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1153(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1153-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1154 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1154-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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