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參數(shù)資料
| 型號(hào)： | 2SK1153 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1153 |
2SK1153, 2SK1154
5
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
ID = 1 A
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
3 A
50
20
10
5
0.5
0.2
0.5
1.0
2
10
Drain Current ID (A)
0.1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
VGS = 10 V
5
2
1.0
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
4
3
2
1
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
3 A
ID = 1 A
2 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.05
0.1
0.2
1.0
2
5
Drain Current ID (A)
0.1
0.2
0.5
VDS = 10 V
Pulse Test
75°C
–25°C
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1154 | 3 ohm, POWER, FET, TO-220AB |
| 2SK1157-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1159-E | 8 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1164 | 0.8 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1153(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1153-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1154 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1154-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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