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參數(shù)資料
| 型號(hào)： | 2SK1153 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET, TO-220AB |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1153 |
2SK1153, 2SK1154
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1153 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1154
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1153 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1154
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1153 R
DS(on)
—
2.0
2.8
I
D = 2 A, VGS = 10 V *
1
on stateresistance
2SK1154
—
2.2
3.0
Forward transfer admittance
|yfs|
1.5
2.5
—
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
—
330
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
90
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
15
—
pF
Turn-on delay time
t
d(on)
—7
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
—
20
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—30
—
ns
Fall time
t
f
—20
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 3 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK1154 | 3 ohm, POWER, FET, TO-220AB |
| 2SK1157-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1159-E | 8 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1153(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1153-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1154 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1154-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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