參數資料
型號: 2SJ649
英文描述: 2SJ649 Data Sheet | Data Sheet[05/2003]
中文描述: 2SJ649數據表|數據表[05/2003]
文件頁數: 1/8頁
文件大?。?/td> 75K
代理商: 2SJ649
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MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
R
DS(on)1
= 48 m
MAX. (V
GS
= –10
V, I
D
= –10
A)
R
DS(on)2
= 75 m
MAX. (V
GS
= –4.0
V, I
D
= –10 A)
Low input capacitance:
C
iss
= 1900 pF TYP. (V
DS
= –10
V, V
GS
= 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
20
m
20
m
70
25
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
A
Drain Current (pulse)
Note1
I
D(pulse)
A
Total Power Dissipation (T
C
= 25°C)
P
T
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Single Avalanche Current
Note2
I
AS
–20
A
Single Avalanche Energy
Note2
E
AS
40
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
, V
GS
= –20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ649
Isolated TO-220
(Isolated TO-220)
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相關代理商/技術參數
參數描述
2SJ649-AZ 功能描述:MOSFET P-CH -60V -20A TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SJ650 功能描述:MOSFET P-CH 60V 12A TO-220ML RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SJ651 功能描述:MOSFET P-CH 60V 20A TO-220ML RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SJ651_03 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications
2SJ651-S 制造商:ON Semiconductor 功能描述: