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參數(shù)資料
| 型號： | 2SJ575 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SJ575 |
2SJ575
5
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.4
-0.8
-1.2
-1.6
-2.0
V
= 0,5 V
GS
-5 V
Pulse Test
Switching Characteristics
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
-10 V
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance
vs. Drain to Source Voltage
1000
100
10
1
-0.1
-0.02
-0.01
Drain Current
I
(A)
D
Switching
Time
t
(ns)
-0.05
5
2
20
50
200
500
V
= -4 V, V
= -10 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
0
-10
-20
-30
-40
-50
100
10
20
50
1
2
5
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ576 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ581-AZ | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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