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參數(shù)資料
| 型號： | 2SJ575 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SJ575 |
2SJ575
3
Main Characteristics
-0.1
-1.0
-10
-50
-0.5
-0.4
-0.3
-0.2
-0.1
0
-2
-4
-6
-8
-10
-0.5
-0.4
-0.3
-0.2
-0.1
0
-2
-4
-6
-8
-10
800
600
400
200
0
50
100
150
200
V
= -3 V
GS
Tc = –25 °C
75 °C
Pulse Test
V
= -10 V
Pulse Test
DS
-5
-1.0
-0.1
-0.01
-0.001
PW
=
10
ms
(1
shot)
DC
Operation
-5V
-4 V
-7 V -6 V
25 °C
Drain to Source Voltage
V
(V)
DS
Mavimum Safe Operation Area
Drain
Current
I
(A)
D
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in this area
is limited by RDS(on)
Channel
Dissipation
*Pch
(mW)
Ambient Temperature
Ta ( °C)
Power vs. Temperature Derating
Drain
Current
I
(A)
D
Drain
Current
I
(A)
D
10 s
100 s
1 ms
-0.05
-0.2 -0.5
-2
-5
-20
-0.0005
-0.002
-0.005
-0.02
-0.05
-0.2
-0.5
-2
Ta=25 °C
*Value on the alumina ceramic boad (12.5x20x0.7mm)
Value on the alumina ceramic boad (12.5x20x0.7mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ576 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ581-AZ | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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