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參數(shù)資料
| 型號： | 2SJ575 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 39K |
| 代理商： | 2SJ575 |
2SJ575
4
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
10
8
6
4
2
–40
0
40
80
120
160
0
I
= -100mA
D
-10m A
Pulse Test
I
= -10m A, -50m A
D
V
= -4 V
GS
-10 V
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
-0.01
-0.05
-0.02
50
20
10
2
5
1.0
0.5
-0.1
V
= -4 V
GS
-10V
Pulse Test
Drain Current
I
(A)
D
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
( °C)
Static Drain to Source on State
Resistance vs. Temperature
Typical Transfer Characteristics
-50m A
-100m A
-10m A, -50m A, -100m A
-0.01
-0.02
-0.1
0.5
0.1
0.01
Drain Current I
(A)
D
|yfs|
(S)
Forward
Transfer
Admittance
-0.05
0.005
0.02
0.05
0.2
V
= -10 V
Pulse Test
DS
Tc = –25 °C
75 °C
25 °C
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
R
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ576 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ577SMP-FD | 3 A, 250 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ581-AZ | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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