參數(shù)資料
型號: 2SJ493
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 1/8頁
文件大?。?/td> 66K
代理商: 2SJ493
The information in this document is subject to change without notice.
1999
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D11265EJ3V0DS00 (3rd edition)
January 1999 NS CP(K)
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 100 m
(MAX.) (V
GS
= –10 V, I
D
= –8 A)
R
DS(on)2
= 185 m
(MAX.) (V
GS
= –4 V, I
D
= –8 A)
Low C
iss
: C
iss
= 1210 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–60
V
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Note1
V
GSS(AC)
#
20
–20, 0
V
V
GSS(DC)
V
Drain Current (DC)
Drain Current (pulse)
Note2
I
D(DC)
#
16
#
64
30
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25°C)
P
T
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
–16
A
E
AS
25.6
mJ
Notes 1.
f = 20
kHz, Duty Cycle
10% (+Side)
2.
PW
10
μ
s, Duty Cycle
1 %
3.
Starting T
ch
= 25
°C, R
A
= 25
, V
GS
= –20
V
0
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
4.17
°C/W
Channel to Ambient
R
th(ch-A)
62.5
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ493
Isolated TO-220
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