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參數(shù)資料
| 型號： | 2SJ495 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SJ495 |
1997
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 30 m
MAX. (V
GS
= –10 V, I
D
= –15 A)
R
DS(on)2
= 56 m
MAX. (V
GS
= –4 V, I
D
= –15 A)
Low C
iss
C
iss
= 4120 pF TYP.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage*
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)**
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
Storage Temperature
*f = 20 kHz, Duty Cycle
≤
10% (+Side)
**PW
≤
10
μ
s, Duty Cycle
≤
1%
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
m
20
–20, 0
m
30
m
120
35
2.0
150
–55 to +150
V
V
V
A
A
W
W
°
C
°
C
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
MP-45F (ISOLATED TO-220)
R
th(ch-c)
R
th(ch-A)
3.57
62.5
°
C/W
°
C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
2.54
2.54
1.5 ± 0.2
1.3 ± 0.2
2.5 ± 0.1
1. Gate
2. Drain
3. Source
0.65 ± 0.1
0.7 ± 0.1
10.0 ± 0.3
4.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
1
1
1
4
3
2
1
3
Gate
Drain
Body
Diode
Gate Protection
Diode
Source
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ495-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -30A 30m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220 Isolated |
| 2SJ496 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ496_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ496TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R |
| 2SJ498 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FIELD-EFFECT TRANSISTOR |
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