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參數(shù)資料
| 型號(hào)： | 2SJ494 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 71K |
| 代理商： | 2SJ494 |
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
1998
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 50 m
:
Max. (V
GS
= –10 V, I
D
= –10 A)
R
DS(on)2
= 88 m
:
Max. (V
GS
= –4 V, I
D
= –10 A)
Low C
iss
C
iss
= 2360 pF Typ.
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage*
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)**
Total Power Dissipation (T
C
= 25 °C)
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS (AC)
V
GSS (DC)
I
D (DC)
I
D (pulse)
P
T
P
T
T
ch
T
stg
–60
+20
–20, 0
+20
+80
35
2.0
150
–55 to +150
V
V
V
A
A
W
W
°C
°C
* f = 20 kHz, Duty Cycle
d
10% (+Side)
** PW
d
10
P
s, Duty Cycle
d
1%
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th (ch-C)
R
th (ch-A)
3.57 °C/W
62.5 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.2
1.5±0.2
0.7±0.1
2.54
2.54
1 2 3
ISOLATED TO-220 (MP-45F)
4
1
1
1
3
4.5±0.2
2.5±0.1
0.65±0.1
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
–
–
–
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ494-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 50m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ495 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ495-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -30A 30m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220 Isolated |
| 2SJ496 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ496_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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