參數(shù)資料
型號(hào): 2SJ494
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開(kāi)關(guān)P溝道功率MOS FET工業(yè)用
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 71K
代理商: 2SJ494
5
2SJ494
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
D
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
S
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
–0.1
0
–50
40
0
50
100
150
I
D
= –10 A
–0.1
0
–1
–10
–100
–1.0
Pulsed
10
–0.1
100
1 000
10 000
–1
–10
–100
V
= 0
f = 1 MHz
10
100
1 000
–1
–10
–100
V
G
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
r
di/dt = 50 A/ s
V
GS
= 0
1
–0.1
10
–1
–10
–100
–2.0
–3.0
V
DD
= –30 V
V
GS
= –10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–80
Q
G
- Gate Charge - nC
V
D
0
20
40
60
80
–20
–40
–60
–2
–4
–6
–8
0
80
160
120
V
GS
= –4 V
V
GS
= –10 V
C
iss
C
oss
C
rss
V
DD
= –48 V
–24 V
–12 V
V
GS
V
DS
t
d(off)
t
d(on)
t
r
t
f
V
GS
= –4 V
V
GS
= 0
1000
100
–12
–14
–10
I
D
= –20 A
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