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參數(shù)資料
| 型號： | 2SJ492-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SJ492-S |
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D11264EJ1V0DS00 (1st edition)
December 1998 NS CP(K)
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for DC/DC converters and motor/lamp driver
circuits.
FEATURES
Low on-state resistance
R
DS(on)1
= 100 m
(MAX.) (V
GS
= –10 V, I
D
= –10 A)
R
DS(on)2
= 185 m
(MAX.) (V
GS
= –4 V, I
D
= –10 A)
Low C
iss
: C
iss
= 1210 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
–60
V
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Note1
V
GSS(AC)
#
20
–20, 0
V
V
GSS(DC)
V
Drain Current (DC)
Drain Current (pulse)
Note2
I
D(DC)
#
20
#
80
1.5
A
I
D(pulse)
A
Total Power Dissipation (T
A
= 25°C)
P
T
W
Total Power Dissipation (T
C
= 25°C)
P
T
70
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
–20
A
E
AS
40
mJ
Notes 1.
f = 20
kHz, Duty Cycle
≤
10% (+Side)
2.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
3.
Starting T
ch
= 25
°C, R
A
= 25
, V
GS
= –20
V
0
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.79
°C/W
Channel to Ambient
R
th(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ492
TO-220AB
2SJ492-S
TO-262
2SJ492-ZJ
TO-263
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