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參數(shù)資料
| 型號(hào)： | 2SJ449 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SJ449 |
2SJ449
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
D
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
S
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1.0
–0.1
0
–50
0.5
1.0
1.5
0
50
100
150
I
D
= –3 A
0.1
0
1
10
100
0.5
Pulsed
10
–1.0
100
1 000
10 000
–10
–100
–1 000
V
GS
= 0
f = 1 MHz
10
100
1 000
–1.0
–10
–100
V
G
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
r
di/dt = 50 A/ s
V
GS
= 0
1.0
0.1
10
100
1000
1.0
10
100
1.0
1.5
2.0
V
DD
= –125 V
V
GS
= –10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Charge - nC
V
D
0
10
20
30
40
-100
-200
-300
-400
I
D
= –6 A
–5
–10
–15
–20
V
GS
= –10 V
C
rss
C
oss
C
iss
tr
t
d(on)
t
d(off)
t
f
0
V
DD
= –200 V
–125 V
–50 V
V
GS
= 0 V
10 V
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PDF描述 |
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| 2SJ467 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ468 | |
| 2SJ480 | TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 300MA I(D) | TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ449-AZ | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,250V,6.0A,0.55ohm,isoTO-220 |
| 2SJ450 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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