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參數(shù)資料
| 型號： | 2SJ449 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SJ449 |
2SJ449
2
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
0.55
0.8
V
GS
= –10 V, I
D
= –3.0 A
Gate to Source Cutoff Voltage
V
GS(off)
–4.0
–4.8
–5.5
V
DS
= –10 V, I
D
= –1 mA
Forward Transfer Admittance
| y
fs
|
2.0
3.5
V
DS
= –10 V, I
D
= –3.0 A
Drain Leakage Current
I
DSS
–100
V
DS
= –250 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
m
100
V
GS
=
m
30 V, V
DS
= 0
Input Capacitance
C
iss
1040
V
DS
= –10 V
Output Capacitance
C
oss
360
V
GS
= 0
Reverse Transfer Capacitance
C
rss
70
f = 1 MHz
Turn-On Delay Time
t
d(on)
24
I
D
= –3.0 A
Rise Time
t
r
16
V
GS(on)
= –10 V
Turn-Off Delay Time
t
d(off)
47
V
DD
= –125 V
Fall Time
t
f
14
R
G
= 10
, R
L
= 42
Total Gate Charge
Q
G
23.1
I
D
= –6.0 A
Gate to Source Charge
Q
GS
7.1
V
DD
= –200 V
Gate to Drain Charge
Q
GD
12.9
V
GS
= –10 V
Body Diode Forward Voltage
V
F(S-D)
0.92
I
F
= –6.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
155
I
F
= –6.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
930
di/dt = 50 A/
μ
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= –20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
≤
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= –2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
UNIT
V
S
μ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ449-AZ | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,250V,6.0A,0.55ohm,isoTO-220 |
| 2SJ450 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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