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參數(shù)資料
| 型號(hào)： | 2SJ456 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SJ456 |
2SJ456
No.5442-1/4
Features
Low ON-resistance.
High-speed diode incorporated.
Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--250
±
30
--9
PW
≤
10
μ
s, duty cycle
≤
1%
Tc=25
°
C
--36
50
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
--250
±
30
max
Unit
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
ID=--1mA, VGS=0
IG=
±
100
μ
A, VDS=0
VDS=--250V, VGS=0
VGS=
±
25V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--5A
ID=--5A, VGS=--10V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
V
V
--1.0
±
10
--3.0
mA
μ
A
V
S
pF
pF
pF
--2.0
4.8
8.0
0.4
0.55
1950
505
230
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5442A
2SJ456
Package Dimensions
unit : mm
2128
[2SJ456]
22004 TS IM TA-3871
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
7.8
3
8.2
0
0
4
1.0
2.54
1.0
2.54
5.08
8
1
1
0.3
0.6
0.6
0
7.8
5
6
10.0
6.0
2
1
2
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