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參數(shù)資料
| 型號(hào)： | 2SJ449 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開(kāi)關(guān)P溝道功率MOS FET工業(yè)用 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | 2SJ449 |
2SJ449
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
V
GS
- Gate to Source Voltage - V
R
D
0
–5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
I
D
- Drain Current - A
R
D
0.5
–1.0
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
100
V
DS
= –10 V
Pulsed
–1.0
1.0
10
100
–10
–100
0.5
–10
–15
Pulsed
1.0
–10
–100
Pulsed
Single Pulse
0
1.5
–2.0
V
DS
= –10 V
I
D
= –1 mA
–4.0
–6.0
–8.0
–50
0
50
100
150
0
R
th(ch-a)
= 62.5 C/W
R
th(ch-c)
= 3.57 C/W
0.1
–0.1
1.0
V
GS
= –10 V
–20 V
μ
μ
I
D
= –6 A
–3 A
–1.2 A
T
A
= –25 C
25 C
75 C
125 C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ449-AZ | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,250V,6.0A,0.55ohm,isoTO-220 |
| 2SJ450 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ451 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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