參數(shù)資料
型號(hào)： 2SJ411
廠商： NEC Corp.
英文描述： CABLE ASSEMBLY; SMA MALE TO SMA MALE; 50 OHM, RG214/U COAX, DOUBLE SHIELDED; 6" CABLE LENGTH
中文描述： P通道信號(hào)開關(guān)場效應(yīng)晶體管
文件頁數(shù)： 5/6頁
文件大?。?/td> 70K
代理商： 2SJ411
2SJ411
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m
PW - Pulse Width - S
1
100
r
t
(
0.1
Single pulse
10
1000
10 m
100 m
1
10
100
1000
相關(guān)PDF資料
PDF描述
2SJ418TP TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | TO-251VAR
2SJ418TP-FA Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ440Y Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ443 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220FN
2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ412 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ412 (SM;Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM
2SJ412(Q) 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL
2SJ412(SM,Q) 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ412(TE24L,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM
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