參數(shù)資料
型號： 2SJ411
廠商： NEC Corp.
英文描述： CABLE ASSEMBLY; SMA MALE TO SMA MALE; 50 OHM, RG214/U COAX, DOUBLE SHIELDED; 6" CABLE LENGTH
中文描述： P通道信號開關(guān)場效應(yīng)晶體管
文件頁數(shù)： 4/6頁
文件大?。?/td> 70K
代理商： 2SJ411
2SJ411
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0
–2
–6
–10
–16
–20
V
GS
- Gate to Source Voltage - V
0.1
0.2
0.3
0.4
0.5
R
D
–12
–4
–8
–14
–18
I
D
= –5 A
Pulsed
T
A
= 125 C
T
A
= 75 C
T
A
= –25 C
T
A
= 25 C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
–10
V
GS
= 0
Pulsed
–0.4
–1.4
V
SD
- Source to Drain Voltage - V
–0.001
–0.01
–0.1
–1
I
S
–0.0001
–1
–0.6
–0.8
–1.2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
V
= 0
f = 1 MHz
–1
–10
–100
V
DS
- Drain to Source Voltage - V
100
1000
C
i
,
o
,
r
10
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
–0.1
–10
I
D
- Drain Current - A
10
100
1000
t
d
,
r
,
d
,
f
1
–1
V
DD
= –15 V
V
GS(on)
= –10 V
R
G
t
f
t
d(off)
t
r
t
d(on)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
16
24
Q
g
- Gate Charge - nC
–4
–8
–12
V
G
0
8
32
–30
–20
–10
0
V
DS
V
GS
V
D
相關(guān)PDF資料
PDF描述
2SJ418TP TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | TO-251VAR
2SJ418TP-FA Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ440Y Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ443 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220FN
2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ412 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ412 (SM;Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM
2SJ412(Q) 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL
2SJ412(SM,Q) 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ412(TE24L,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM
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