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參數(shù)資料
| 型號(hào)： | 2SJ411 |
| 廠商： | NEC Corp. |
| 英文描述： | CABLE ASSEMBLY; SMA MALE TO SMA MALE; 50 OHM, RG214/U COAX, DOUBLE SHIELDED; 6" CABLE LENGTH |
| 中文描述： | P通道信號(hào)開關(guān)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | 2SJ411 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
2
9
1
0.55 ±0.1
0.8 ±0.1
0.6 ±0.1
3
0.6 ±0.1
0.6 ±0.1
1.71.7
1
4
G D S
EQUIVALENT CIRCUIT
Drain (D)
Source (S)
Internal
Diode
Gate
Protection
Diode
Gate (G)
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
FEATURES
Radial taping supported
Can be directly driven by 5-V IC
Low ON resistance
R
DS(on)
= 0.24
MAX. @V
GS
= –4 V, I
D
= –2.5 A
R
DS(on)
= 0.11
MAX. @V
GS
= –10 V, I
D
= –2.5 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
–30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
–20/+10
V
Drain Current (DC)
I
D(DC)
±
5.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10
μ
s
Duty cycle
≤
1 %
±
20.0
A
Total Power Dissipation
P
T1
T
A
= 25 C
1.0
W
Total Power Dissipation
P
T2
T
C
= 25 C
6.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM |
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