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參數(shù)資料
| 型號(hào)： | 2SJ411 |
| 廠商： | NEC Corp. |
| 英文描述： | CABLE ASSEMBLY; SMA MALE TO SMA MALE; 50 OHM, RG214/U COAX, DOUBLE SHIELDED; 6" CABLE LENGTH |
| 中文描述： | P通道信號(hào)開關(guān)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2SJ411 |
2SJ411
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= –30 V, V
GS
= 0
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= –16/+10 V, V
DS
= 0
±
10
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –10 V, I
D
= –2.5 A
3.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= –4 V, I
D
= –2.5 A
0.175
0.24
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= –10 V, I
D
= –2.5 A
0.096
0.11
Input Capacitance
C
iss
V
DS
= –10 V, V
GS
= 0
f = 1.0 MHz
790
pF
Output Capacitance
C
oss
580
pF
Reverse Transfer Capacitance
C
rss
280
pF
Turn-On Delay Time
t
d(on)
V
DD
= –15 V, I
D
= –2.5 A
V
GS(on)
= –10 V
R
G
= 10
, R
L
= 6
10
ns
Rise Time
t
r
110
ns
Turn-Off Delay Time
t
d(off)
195
ns
Fall Time
t
f
185
ns
Gate Input Charge
Q
G
V
DS
= –24 V
V
GS
= –10 V
I
D
= –5.0 A, I
G
= –2 mA
29.8
nC
Gate to Source Charge
Q
GS
2.7
nC
Gate to Drain Charge
Q
GD
11.5
nC
Internal Diode Forward Voltage
V
F(S-D)
I
F
= 5.0 A, V
GS
= 0
1.0
V
Internal Diode Reverse Recovery Time
t
rr
I
F
= 5.0 A, V
GS
= 0
di/dt = 50 A/
μ
s
140
ns
Internal Diode Reverse Recovery Charge
Q
rr
160
nC
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0
25
50
75
125
150
T
A
- Ambient Temperature - C
20
40
60
80
100
d
FORWARD BIAS SAFE OPERATING AREA
–0.5
–5
–10
–50
–100
I
D
–0.2
–0.1
0
100
–1
–5
–10
–50
–100
V
DS
- Drain to Source Voltage - V
–2
–20
DC
PW=100mS
PW=10mS
PW=1mS
R
DS(on)
Lmted
I
D(DC)
= –5 A
I
D(pulse)
= –20 A
T
C
= 25 C
Single pulsed
–1
–2
–20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ412(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM |
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