參數(shù)資料
型號: 2SJ356
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: 個P -溝道MOS場效應(yīng)管高高速開關(guān)
文件頁數(shù): 3/6頁
文件大小: 68K
代理商: 2SJ356
2SJ356
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
–0.001
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
1
0.8
0.6
0.4
0.2
V
GS
- Gate to Source Voltage - V
–10
–0.01
–0.1
–1
V
GS
= –10 V
Pulsed
T
A
= 150 C
T
A
= 75 C
T
A
= 25 C
T
A
= 0 C
T
A
= –25 C
–20
–2
–4
–6
–8 –10 –12 –14 –16 –18
I
D
= 2.0 A
I
D
= 1.0 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
0
–5
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
–1
–10
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
f
|
–0.0001
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
–0.001
1.5
I
D
- Drain Current - A
Pulsed
–1
–2
–3
–4
–5
–4
–3
–2
–1
–10V
–45V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
V
GS
= –2.0 V
–2
–3
–4
–1
–0.1
–0.01
–0.001
–0.0001
–0.00001
V
DS
= –10 V
Pulsed
T
A
= 150 C
T
A
= –25 C
T
A
= 25 C
T
A
= 75 C
1
0.1
0.01
0.001
–0.001
–0.01
–0.1
–1
T
A
= –25 C
T
A
= 0 C
T
A
= 25 C
T
A
= 75 C
T
A
= 150C
V
GS
= –4 V
Pulsed
1
0.5
0
–0.01
–0.1
–1
–10
T
A
= 150 C
T
A
= 75 C
T
A
= 25 C
T
A
= 0 C
T
A
= –25 C
V
DS
= –10 V
Pulsed
T
A
= 0 C
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