- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370097 > 2SJ356 (NEC Corp.) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PDF資料下載
參數(shù)資料
| 型號： | 2SJ356 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 中文描述： | 個P -溝道MOS場效應(yīng)管高高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SJ356 |
2SJ356
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= –60 V, V
GS
= 0
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
= –16/+10 V, V
DS
= 0
±
10
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –10 V, I
D
= –1.0 A
1.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= –4 V, I
D
= –1.0 A
0.65
0.95
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= –10 V, I
D
= –1.0 A
0.41
0.50
Input Capacitance
C
iss
V
DS
= –10 V, V
GS
= 0,
f = 1.0 MHz
270
pF
Output Capacitance
C
oss
145
pF
Reverse Transfer Capacitance
C
rss
55
pF
Turn-On Delay Time
t
d(on)
V
DD
= –25 V, I
D
= –1.0 A
V
GS(on)
= –10 V
R
G
= 10
, R
L
= 25
4.3
ns
Rise Time
t
r
21
ns
Turn-Off Delay Time
t
d(off)
115
ns
Fall Time
t
f
75
ns
Gate Input Charge
Q
G
V
DS
= –48 V,
V
GS
= –10 V,
I
D
= –2.0 A, I
G
= –2 mA
11.6
nC
Gate to Source Charge
Q
GS
1.0
nC
Gate to Drain Charge
Q
GD
3.8
nC
Internal Diode Reverse Recovery Time
t
rr
I
F
= 2.0 A,
di/dt = 50 A/
μ
s
82
ns
Internal Diode Reverse Recovery Charge
Q
rr
94
nC
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
25
100
80
60
40
20
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
I
D
–0.5
–10
V
DS
- Drain to Source Voltage - V
0
50
75
100
125
150
–5
–2
–1
–0.5
–0.2
–0.1
–0.05
Single pulse
–1
–100
–2
–5
–10
–20
–50
PW=100ms
DC
1ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ357 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ361 | Silicon P-Channel MOS FET |
| 2SJ362 | Very High-Speed Switching Applications |
| 2SJ363 | Silicon P-Channel MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ356-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ356-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R Tape & Reel |
| 2SJ357 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。