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參數(shù)資料
| 型號： | 2SJ350 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ350 |
2SJ350
5
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
–0.1 –0.2
10
1000
200
500
100
20
50
di / dt = 50 A / μs, V = 0
Ta = 25 °C, Pulse Test
–0.5
–1
–2
–5
–10
0
–10
–20
–30
-40
–50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
1000
500
200
100
20
10
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
–40
–80
–120
–160
0
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
–200
G
G
Dynamic Input Characteristics
20
40
60
80
100
DS
V
GS
V
V = –25 V
–50 V
–80 V
I = –6 A
V = –25 V
–50 V
–80 V
500
200
100
50
20
10
5
–0.05 –0.1 –0.2
–0.5
–1
Drain Current I (A)
S
Switching Characteristics
–2
–5
–10
V = –10 V, V = –30 V
PW = 2 μs, duty < 1 %
tf
r
d(off)
t
d(on)
t
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PDF描述 |
|---|---|
| 2SJ351 | Silicon P-Channel MOS FET |
| 2SJ352 | Silicon P-Channel MOS FET |
| 2SJ353 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ355 | P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ356 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ350-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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