- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370097 > 2SJ350 (Hitachi,Ltd.) Silicon P-Channel MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ350 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ350 |
2SJ350
4
–5
–4
–3
–2
–1
0
Gate to Source Voltage V (V)
V
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
–2 A
–1 A
I = –5 A
D
Pulse Test
–4
–8
–12
–16
–20
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
5
2
1
0.2
0.5
0.1
–0.1 –0.2
–0.5
–1
–2
–5
–10 –20
–10 V
V = –4 V
Pulse Test
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
I = –3 A
–2 A
–3 A
V = –4 V
–1 A
Pulse Test
–10 V
–1, –2 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
75 °C
25 °C
Tc = –25 °C
V = –10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ351 | Silicon P-Channel MOS FET |
| 2SJ352 | Silicon P-Channel MOS FET |
| 2SJ353 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ355 | P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ356 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ350-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。