參數(shù)資料
型號: 2SJ351
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 40K
代理商: 2SJ351
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143
1st. Edition
Application
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Ordering Information
Type No.
V
DSX
–180 V
2SJ351
2SJ352
–200 V
相關(guān)PDF資料
PDF描述
2SJ352 Silicon P-Channel MOS FET
2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING
2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ351(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ351-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ352 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube
2SJ352-E 功能描述:MOSFET P-CH 200V 8A TO-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件