參數(shù)資料
型號(hào): 2SD1606
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
中文描述: 硅npn型三重?cái)U(kuò)散(三倍擴(kuò)散npn型晶體管)
文件頁數(shù): 1/5頁
文件大?。?/td> 35K
代理商: 2SD1606
2SD1606
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2.6 k
(Typ)
160
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
123
I
D
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
120
V
Collector to emitter voltage
120
V
Emitter to base voltage
7
V
Collector current
6
A
Collector peak current
12
A
Collector power dissipation
1
40
W
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
Note:
1. Value at T
C
= 25°C.
I
D
*
1
6
A
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