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參數(shù)資料
| 型號(hào)： | 2SD1615 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD |
| 中文描述： | NPN硅外延晶體管的微型模具 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | 2SD1615 |
SILICON TRANSISTORS
2SD1615, 2SD1615A
Document No. D10198EJ 3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published J une 1995 P
Printed in J apan
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
World Standard Miniature Package
Low V
CE (sat)
V
CE(sat)
= 0.15 V
Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
*
Maximum Power Dissipation
Total Power Dissipation
at 25 C Ambient Temperature
**
P
T
Maximum Temperatures
J unction Temperature
Storage Temperature Range
2SD1615
60
50
2SD1615A
120
60
V
CBO
V
CEO
V
EBO
I
C
I
C
V
V
A
A
A
6
1
2
2.0
W
T
j
T
stg
150
C
C
–55 to +150
*
PW
≤
10 ms, Duty Cycle
≤
50 %
**
When mounted on ceramic substrate of 16 cm
2
×
0.7 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
100
100
100
600
400
nA
nA
nA
2SD1615
2SD1615A
V
EB
= 6.0 V, I
C
= 0
2SC1615
2SD1615A
V
CB
= 60 V, I
E
= 0
V
CB
= 120 V, I
E
= 0
Emitter Cutoff Current
DC Current Gain
I
EBO
h
FE1
***
135
135
290
V
CE
= 2.0 V, I
C
= 100 mA
DC Current Gain
h
FE2
***
V
CE(sat)
***
V
BE(sat)
***
V
BE
***
81
270
0.15
0.9
V
CE
= 2.0 V, I
C
= 1.0 A
I
C
= 1.0 A, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 50 mA
V
CE
= 2.0 V, I
C
= 50 mA
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
0.3
1.2
700
V
V
600
mV
Gain Bandwidth Product
Output Capacitance
f
T
C
ob
80
160
19
MHz
pF
V
CE
= 2.0 V, I
E
= –100 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
***
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2 %
h
FE
Classification
MARKING
2SD1615
2SD1615A
GM
GQ
GL
GP
GK
h
FE
135 to 270
200 to 400
300 to 600
1985
DATA SHEET
C
E
B
4.5± 0.1
1.6 ± 0.2
0.42 ± 0.06
0.42
1.5 ± 0.1
2
0
4
1.5
3.0
0.41
– 0.05
1. Emitter
2. Collector
3. Base
0.47
± 0.06
PACKAGE DIMENSIONS
in millimeters
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1615A | NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD |
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| 2SD1627 | Driver Applications |
| 2SD1628 | High-Current Switching Applications |
| 2SD1630 | NPN SILICON DARLINGTON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1615A-GP-T1-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Tape & Reel 制造商:Renesas 功能描述:0 |
| 2SD1615A-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,1.0A,P-MINIMOLD3 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1615A-T1-AZ(GP) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615A-T1-AZ(GQ) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1615-AZ | 制造商:Renesas Electronics 功能描述:Bipolar Power Power Mini-Mold Bulk 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 4-Pin(3+Tab) Power Mini-Mold |
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