參數(shù)資料
型號(hào): 2SD1381F
廠商: Rohm CO.,LTD.
英文描述: Power Transistor (80V, 1A)
中文描述: 功率晶體管(80V的,1A)條
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 89K
代理商: 2SD1381F
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
V
CBO
100
V
Collector-emitter voltage
V
CEO
80
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
1
A (DC)
A (Pulse)
1
2
Junction temperature
Tj
150
C
Storage temperature
1 Pw=20ms, duty=1 / 2
2 Printed circuit board 1.7mm thick, collector copper plating 1cm
2
or larger.
3 When mounted on a 40
×
40
×
0.7mm ceramic board.
Tstg
55
~+
150
C
Collector power
dissipation
P
C
0.5
2
2
1
3
10
0.3
1
1.2
W
W (Tc=25C)
W
W (Tc=25C)
5
2SD1898
2SD1733
2SD1768S
2SD1863
2SD1381F
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
*
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
100
80
5
180
2SD1863
2SD1733, 2SD1898
2SD1768S
2SD1381F
0.15
100
20
1
1
0.4
390
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
80V
V
EB
=
4V
I
C
/I
B
=
500mA/20mA
V
CE
=
10V, I
E
=
50mA, f
=
100MHz
V
CE
=
3V, I
C
=
0.5A
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
V
82
390
120
390
82
270
MHz
pF
Typ.
Max.
Unit
Conditions
相關(guān)PDF資料
PDF描述
2SD1863 Power Transistor (80V, 1A)
2SD1898 Power Transistor (80V, 1A)
2SD1756 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD1757K Power Transistor (15V, 0.5A)
2SD1759 Power transistor (40V, 2A)
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