參數(shù)資料
型號: 2SD1757K
廠商: Rohm CO.,LTD.
英文描述: Power Transistor (15V, 0.5A)
中文描述: 功率晶體管(15V的,0.5A的)
文件頁數(shù): 1/2頁
文件大?。?/td> 57K
代理商: 2SD1757K
2SD1757K
Transistors
Power Transistor (15V, 0.5A)
2SD1757K
!
Features
1) Low V
CE(sat)
. (Typ.8mV at I
C
/I
B
= 10/1mA)
2) Optimal for muting.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
6.5
0.5
0.2
150
55~+150
Unit
V
V
V
A
W
°
C
°
C
!
External dimensions
(Units : mm)
ROHM : SMT3
EIAJ : SC-59
(2) Base(Gate)
(3) Collector(Drain)
(1) Emitter(Source)
Each lead has same dimensions
0
0
0
0.3to0.6
1
(
(
2.8
1.6
0
(
2
1
0
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD1757K
SMT3
QRS
AA
T146
3000
*
* Denotes h
FE
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
30
15
6.5
-
-
-
Typ.
-
-
-
-
-
0.1
Max.
-
-
-
0.5
0.5
0.4
Unit
V
V
V
μ
A
μ
A
V
Conditions
DC current transfer ratio
Transition frequency
Output capacitance
h
FE
f
T
Cob
120
-
-
-
150
15
560
-
-
-
MHz
pF
I
C
= 50
μ
A
I
C
= 1mA
I
E
= 50
μ
A
V
CB
= 20V
V
EB
= 4V
I
C
/I
B
= 500mA/50mA
V
CE
/I
C
= 3V/100mA
V
CE
= 5V , I
E
=
50mA , f = 100MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1757KT146 制造商:ROHM Semiconductor 功能描述:
2SD1757KT146Q 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1757KT146R 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1757KT146S 功能描述:兩極晶體管 - BJT NPN 15V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1758Q 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR